DocumentCode
1443264
Title
Effects of field-dependent mobility on transfer efficiency in m.o.s. b.b.d. analogue delay lines
Author
Haslett, J.W. ; Kejariwal, M.L.
Author_Institution
University of Calgary, Department of Electrical Engineering, Calgary, Canada
Volume
124
Issue
2
fYear
1977
fDate
2/1/1977 12:00:00 AM
Firstpage
109
Lastpage
113
Abstract
The effects of field-dependent mobility on transfer inefficiency due to intrinsic transfer limitations, dynamic-dram conductance and threshold-voltage modulation are calculated for an m.o.s. bucket-brigade delay line. The results show significant differences over previous theories at higher clock frequencies, where line performance is critical if quantisation errors are to be minimised in analogue applications.
Keywords
analogue computer circuits; delay lines; metal-insulator-semiconductor devices; monolithic integrated circuits; BBD; MOS; analogue delay lines; bucket brigade delay line; dynamic drain conductance; field dependent mobility effects; intrinsic transfer limitations; metal oxide semiconductor; quantisation errors; threshold voltage modulation; transfer efficiency;
fLanguage
English
Journal_Title
Electrical Engineers, Proceedings of the Institution of
Publisher
iet
ISSN
0020-3270
Type
jour
DOI
10.1049/piee.1977.0018
Filename
5253543
Link To Document