• DocumentCode
    1444067
  • Title

    Modeling of the Output and Transfer Characteristics of Graphene Field-Effect Transistors

  • Author

    Scott, Brett W. ; Leburton, Jean-Pierre

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Champaign, IL, USA
  • Volume
    10
  • Issue
    5
  • fYear
    2011
  • Firstpage
    1113
  • Lastpage
    1119
  • Abstract
    We obtain the output and transfer characteristics of graphene field-effect transistors by using the charge-control model for the current, based on the solution of the Boltzmann equation in the field-dependent relaxation time approximation. Closed expressions for the conductance, transconductance, and saturation voltage are derived. We found good agreement with the experimental data of Meric et al. [Nat. Nanotechnol. vol. 3, p. 684, 2008] without assuming carrier density-dependent velocity saturation.
  • Keywords
    Boltzmann equation; electric admittance; field effect transistors; graphene; Boltzmann equation; C; charge-control model; field-dependent relaxation time approximation; graphene field-effect transistors; saturation voltage; transconductance; transfer characteristics; Logic gates; Materials; Mathematical model; Resistance; Scattering; Threshold voltage; Transistors; Graphene; high field effect; saturation velocity; simulation; transistors;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2011.2112375
  • Filename
    5709989