Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

Author

Yang, Shinhyuk ; Lee, Jeong-Ik ; Park, Sang-Hee Ko ; Cheong, Woo-Seok ; Cho, Doo-Hee ; Yoon, Sung-Min ; Byun, Chun-Won ; Hwang, Chi-Sun ; Chu, Hye-Yong ; Cho, Kyoung-Ik ; Ahn, Taek ; Choi, Yoojeong ; Yi, Mi Hye ; Jang, Jin

Author_Institution

Transparent Display Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

446

Lastpage

448

Abstract

We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm²/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (VT) of 3.10 V, and an on-off ratio of 3.9 ?? 10⁹. The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.

Keywords

glass; insulators; photolithography; thin film transistors; In-Ga-Zn-O; active layer polyimide; glass substrate; organic insulator; oxide semiconductor; photolithography; polyimide gate insulator; soluble polyimide; thin-film transistor; transparent organic-oxide hybrid transistor; voltage 3.1 V; Oxide; sputtering; thin-film transistor (TFT); transparent;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2043334

Filename

5433037