• DocumentCode
    1444760
  • Title

    Evaporative ion plating: process mechanisms and optimization

  • Author

    Fancey, Kevin S. ; Matthews, Allan

  • Author_Institution
    Dept. of Eng. Design & Manuf., Hull Univ., UK
  • Volume
    18
  • Issue
    6
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    869
  • Lastpage
    877
  • Abstract
    The basic discharge mechanisms pertinent to ion plating process are reviewed and some recent findings are highlighted, relating in particular to thermionically enhanced ion plating with an evaporative vapor source. By enhancing the discharge, the cathode sheath can approach collisionless conditions, which allows most of the energy to be transported to the substrate by ions. The energy distribution is also improved, this being significant if a critical energy E* is thought to be required in order to achieve high-quality coatings. It is suggested that E* is about 40 to 70 eV, and that higher bombarding energies may not necessarily improve coating quality, this being alternatively achievable by increasing the ionization efficiency. The role of metal vapors is outlined with reference to evidence from enhanced discharges that clusters of metal atoms exist in the vapor phase and that most of the ion current is transported to the substrate by the metal species. Further practical aspects are discussed such as the spatial distribution of bombardment intensity, which is shown to decrease exponentially with distance from the thermionic emitter used for discharge enhancement. It is suggested that positioning the thermionic emitter in close proximity to the vapor source will provide a more consistent ratio between energetic bombardment effects and vapor arrival rates throughout the deposition volume
  • Keywords
    ion plating; optimisation; plasma deposition; reviews; 40 to 70 eV; cathode sheath; critical energy; energy distribution; evaporative ion plating; metal atom clusters; metal vapors; plasma deposition; thermionic emitter; Anodes; Cathodes; Coatings; Diodes; Fault location; Glow discharges; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.61497
  • Filename
    61497