Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

Author

Lee, Jae-Hoon ; Jeong, Jae-Hyun ; Lee, Jung-Hee

Author_Institution

GaN Power Res. Group, Samsung LED Co., Ltd., Suwon, South Korea

Volume

33

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

492

Lastpage

494

Abstract

AlGaN/GaN Schottky barrier diodes (SBDs) with and without the in situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with the SiCN cap layer exhibited improved electrical characteristics, such as the forward turn-on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, as compared with the corresponding values of 0.8 V, 3.8 A, and 580 V for the reference SBD without the SiCN cap layer. This improvement in the device performance of the SiCN-SBD is because the in situ SiCN cap layer not only lowers the barrier height but also effectively passivates the surface of the device with better surface morphology.

Keywords

Schottky barriers; Schottky diodes; aluminium compounds; gallium compounds; passivation; semiconductor device breakdown; silicon compounds; AlGaN-GaN; Schottky barrier diodes; barrier height; current 4.1 A; device surface passivation; electrical characteristics; forward current; forward turn-on voltage; in situ deposited silicon carbon nitride cap layer; reverse breakdown voltage; surface morphology; voltage 0.7 V; voltage 1.5 V; Aluminum gallium nitride; Gallium nitride; Leakage current; Passivation; Schottky barriers; Surface morphology; AlGaN/GaN; Schottky barrier diodes (SBDs); in situ; leakage current; silicon carbon nitride (SiCN) cap layer;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2182671

Filename

6151013