Bonding InGaAsP/ITO/Si Hybrid Laser With ITO as Cathode and Light-Coupling Material

Author

Hong, Tao ; Li, Yan-Ping ; Chen, Wei-Xi ; Ran, Guang-Zhao ; Qin, Guo-Gang ; Zhu, Hong-Liang ; Liang, Song ; Wang, Yang ; Pan, Jiao-Qing ; Wang, Wei

Author_Institution

State Key Lab. for Mesoscopic Phys. & Sch. of Phys., Peking Univ., Beijing, China

Volume

24

Issue

8

fYear

2012

fDate

4/15/2012 12:00:00 AM

Firstpage

712

Lastpage

714

Abstract

A 1.5-μ.m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-coupling material is presented. The InGaAsP gain structure with a transparent ITO cathode is flip-chip bonded onto a patterned silicon-on-insulator wafer. The light generated in the InGaAsP multiquantum wells is coupled through the ITO cathode into the Si waveguide to form an InGaAsP/ITO/Si hybrid laser. The threshold current density of this hybrid laser is 20 kA/cm² at 210 K. Due to the advantages of post-bonding and simplicity of the fabrication process, such a hybrid laser may be a promising Si light source.

Keywords

III-V semiconductors; bonding processes; cathodes; elemental semiconductors; gallium arsenide; indium compounds; optical couplers; optical fabrication; optical waveguides; quantum well lasers; silicon; silicon-on-insulator; tin compounds; InGaAsP-ITO-Si; flip-chip bonding; gain structure; hybrid laser; laser fabrication; light coupling material; light source; multiquantum wells; patterned silicon-on-insulator wafer; temperature 210 K; threshold current density; transparent ITO cathode; waveguide; wavelength 1.5 mum; Bonding; Indium tin oxide; Metals; Photonics; Semiconductor lasers; Silicon; Waveguide lasers; Bonding; Si photonics; hybrid laser; indium tin oxide (ITO)/Si;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2012.2187328

Filename

6151030