Characterization of SOA in Time Domain and the Improvement Techniques for Using in High-Voltage Integrated Circuits

Author

Chen, Wen-Yi ; Ker, Ming-Dou

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

2

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

382

Lastpage

390

Abstract

Safe operating area (SOA) in power semiconductors is one of the most important factors affecting device reliability. The SOA region of power MOSFETs must be well characterized for using in circuit design to meet the specification of applications, particularly including the time domain of circuit operations. In this paper, the characterization of SOA in the time domain is performed with the experimental measurement on silicon devices, and the useful techniques to improve SOA of power MOSFETs for using in high-voltage integrated circuits are overviewed.

Keywords

integrated circuit design; power MOSFET; semiconductor device reliability; time-domain analysis; SOA characterization; circuit design; device reliability; high-voltage integrated circuits; improvement techniques; power MOSFET; power semiconductors; safe operating area Characterization; silicon devices; time domain; Current measurement; Power MOSFET; Semiconductor optical amplifiers; Switches; Switching circuits; Transistors; Voltage measurement; Electrical safe operating area (SOA) (eSOA); SOA; power MOSFETs; snapback; thermal SOA (tSOA);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2012.2187450

Filename

6151077