DocumentCode
1445958
Title
Compact Models for Memristors Based on Charge-Flux Constitutive Relationships
Author
Shin, Sangho ; Kim, Kyungmin ; Kang, Sung-Mo
Author_Institution
Sch. of Eng., Univ. of California, Merced, CA, USA
Volume
29
Issue
4
fYear
2010
fDate
4/1/2010 12:00:00 AM
Firstpage
590
Lastpage
598
Abstract
This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
Keywords
circuit simulation; hysteresis; memristors; SPICE; Spectre; Verilog-A; charge-flux constitutive relationships; circuit simulators; compact models; current-controlled memristors; frequency dependent hysteresis; memristors; voltage-controlled memristors; Circuit simulation; Equations; Frequency dependence; Hardware design languages; Hysteresis; Memristors; Nonvolatile memory; SPICE; Semiconductor process modeling; Voltage; Constitutive relationship; macromodel; memductor; memristor; sPICE; spectre; verilog-A;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2010.2042891
Filename
5433745
Link To Document