• DocumentCode
    1445958
  • Title

    Compact Models for Memristors Based on Charge-Flux Constitutive Relationships

  • Author

    Shin, Sangho ; Kim, Kyungmin ; Kang, Sung-Mo

  • Author_Institution
    Sch. of Eng., Univ. of California, Merced, CA, USA
  • Volume
    29
  • Issue
    4
  • fYear
    2010
  • fDate
    4/1/2010 12:00:00 AM
  • Firstpage
    590
  • Lastpage
    598
  • Abstract
    This paper introduces compact models for memristors. The models are developed based on the fundamental constitutive relationships between charge and flux of memristors. The modeling process, with a few simple steps, is introduced. For memristors with limited resistance ranges, a simple method to find their constitutive relationships is discussed, and examples of compact models are shown for both current-controlled and voltage-controlled memristors. Our models satisfy all of the memristor properties such as frequency dependent hysteresis behaviors and also unique boundary assurance to simulate memristors whether they behave memristively or resistively. Our models are implementable in circuit simulators, including SPICE, Verilog-A, and Spectre.
  • Keywords
    circuit simulation; hysteresis; memristors; SPICE; Spectre; Verilog-A; charge-flux constitutive relationships; circuit simulators; compact models; current-controlled memristors; frequency dependent hysteresis; memristors; voltage-controlled memristors; Circuit simulation; Equations; Frequency dependence; Hardware design languages; Hysteresis; Memristors; Nonvolatile memory; SPICE; Semiconductor process modeling; Voltage; Constitutive relationship; macromodel; memductor; memristor; sPICE; spectre; verilog-A;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/TCAD.2010.2042891
  • Filename
    5433745