Well-thickness dependence of high-temperature characteristics in 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers

Author

Ishikawa, T. ; Higashi, T. ; Uchida, T. ; Yamamoto, T. ; Fujii, T. ; Shoji, H. ; Kobayashi, M. ; Soda, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

10

Issue

12

fYear

1998

Firstpage

1703

Lastpage

1705

Abstract

Well-thickness dependence of temperature characteristics of 1.3-μm AlGaInAs-InP strained-multiple-quantum-well lasers was investigated. Higher characteristic temperatures of threshold current density were obtained for thicker wells up to 6 nm. Fabricated ridge-waveguide lasers with 6-nm-thick wells exhibited characteristic temperature of as high as 125 K. Relaxation-oscillation frequency reduced by only 13% between 25/spl deg/C and 85/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 125 K; 25 to 85 degC; 6 nm; AlGaInAs-InP; AlGaInAs-InP strained-multiple-quantum-well lasers; characteristic temperatures; fabricated ridge-waveguide lasers; high-temperature characteristics; relaxation-oscillation frequency; threshold current density; well-thickness dependence; Carrier confinement; Chemical lasers; Frequency; Optical transmitters; Pulse measurements; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.730475

Filename

730475