1.1-W continuous-wave 1480-nm semiconductor lasers with distributed electrodes for mode shaping

Author

Salet, P. ; Gérard, F. ; Fillion, T. ; Pinquier, A. ; Gentner, J.L. ; Delepine, S. ; Doussiére, P.

Author_Institution

OPTO+, Alcatel Corp. Res. Center, Marcoussis, France

Volume

10

Issue

12

fYear

1998

Firstpage

1706

Lastpage

1708

Abstract

Diffraction-limited high-power devices may suffer from self-focusing effects due to nonuniform gain saturation. In this letter, we propose the concept of the distributed electrode, which allows one to improve the modal behavior of these lasers and to reduce spatial-hole burning effects by preferentially localizing current injection in the center of the structure, therefore shaping the optical mode. Utilizing this concept, we have realized unstable cavity lasers exhibiting single-lobe far-field patterns. We report the first realization of flared unstable cavity lasers emitting at 1480 mm with maximum output powers up to 1.1-W continuous-wave and external efficiencies as high as 0.45 W/A.

Keywords

electrodes; laser cavity resonators; laser modes; laser transitions; optical hole burning; quantum well lasers; 1.1 W; 1480 nm; In/sub 0.8/Ga/sub 0.2/As/sub 0.44/P/sub 0.56/; In/sub 0.8/Ga/sub 0.2/As/sub 0.73/P/sub 0.27/; continuous-wave 1480-nm semiconductor lasers; current injection; diffraction-limited high-power devices; distributed electrodes; external efficiencies; flared unstable cavity lasers; modal behavior; mode shaping; nonuniform gain saturation; self-focusing effects; single mode ridge waveguide; single-lobe far-field patterns; spatial-hole burning effects; unstable cavity lasers; Biomedical optical imaging; Diffraction; Electrodes; Fiber lasers; Laser modes; Optical amplifiers; Optical beams; Power lasers; Semiconductor lasers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.730476

Filename

730476