Statistical Modeling With the PSP MOSFET Model

Author

Li, X. ; McAndrew, C.C. ; Wu, W. ; Chaudhry, S. ; Victory, J. ; Gildenblat, G.

Author_Institution

Arizona State Univ., Tempe, AZ, USA

Volume

29

Issue

4

fYear

2010

fDate

4/1/2010 12:00:00 AM

Firstpage

599

Lastpage

606

Abstract

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.

Keywords

MOSFET; Monte Carlo methods; statistical analysis; BPV statistical modeling; Monte-Carlo simulations; NMOS devices; PMOS devices; PSP MOSFET model; backward propagation of variance method; metal-oxide-semiconductor field effect transistors; parasitic capacitances; ring oscillator gate delays; self-consistent modeling; statistical modeling; CMOS technology; Coupling circuits; Delay effects; FETs; Fitting; Integrated circuit modeling; MOS devices; MOSFET circuits; Parasitic capacitance; Ring oscillators; Backward propagation of variance; PSP model; statistical modeling;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2010.2042892

Filename

5433756