High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes

Author

Pulfrey, David L. ; Kuek, J.J. ; Leslie, Michael P. ; Nener, Brett D. ; Parish, Giacinta ; Mishra, Umesh K. ; Kozodoy, P. ; Tarsa, E.J.

Author_Institution

Dept. of Electr. & Comput. Eng., British Columbia Univ., Vancouver, BC, Canada

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

486

Lastpage

489

Abstract

The solar-blind detection capability of heterostructure diodes employing an i-Al_0.33Ga_0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al_0.33Ge_0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude

Keywords

III-V semiconductors; aluminium compounds; doping profiles; gallium compounds; p-i-n photodiodes; semiconductor device models; GaN-Al_0.33Ga_0.67N-GaN; InGaN; InGaN quantum wells; MEDICI; PIN photodiodes; delta-doped regions; doped GaN layers; heterostructure diodes; high UV/solar rejection ratios; low-bandgap GaN regions; p-i-n photodiodes; simulations; solar-blind detection capability; Aluminum gallium nitride; Electrons; Gallium nitride; Medical simulation; P-i-n diodes; PIN photodiodes; Photoconductivity; Photodetectors; Radiative recombination; Solar power generation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906440

Filename

906440