• DocumentCode
    1446086
  • Title

    Ultrafast all-optical switching in an asymmetric Fabry-Perot device using low-temperature-grown GaAs

  • Author

    Loka, H.S. ; Smith, P.W.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
  • Volume
    10
  • Issue
    12
  • fYear
    1998
  • Firstpage
    1733
  • Lastpage
    1735
  • Abstract
    We report the first ultrafast all-optical switching using low-temperature-grown bulk semiconductor material (LT-GaAs) in a compact asymmetric Fabry-Perot device. We obtain 3-ps response times, 2.8-dB insertion loss, 40-nm bandwidth, and 15-dB contrast ratios using 200-fJ/μm2 average switching energy flux.
  • Keywords
    Fabry-Perot resonators; III-V semiconductors; gallium arsenide; integrated optics; optical losses; optical switches; reflectivity; symmetry; 2.8 dB; 3 ps; GaAs; asymmetric Fabry-Perot device; average switching energy flux; bulk semiconductor material; compact asymmetric Fabry-Perot device; contrast ratios; insertion loss; low-temperature-grown GaAs; ps response times; ultrafast all-optical switching; Absorption; Bandwidth; Fabry-Perot; Gallium arsenide; Mirrors; Optical losses; Page description languages; Quantum well devices; Reflectivity; Telecommunication switching;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.730485
  • Filename
    730485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1446086