Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors

Author

Rumyantsev, Serguei L. ; Pala, Nezih ; Shur, Michael S. ; Borovitskaya, Elena ; Dmitriev, Alexander P. ; Levinshtein, Michael E. ; Gaska, Remis ; Khan, M.A. ; Yang, Jinwei ; Hu, Xuhong ; Simin, Grigory

Author_Institution

Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

530

Lastpage

534

Abstract

Local levels with a large activation energy E_a~0.8-1.0 eV have been observed in low-frequency noise measurements of GaN/AlGaN heterostructure field effect transistors (HFETs and MOS-HFETs) grown on 4N-SiC substrates. The noise might come from the thin (30 nm) AlGaN barrier layer. The estimates of the level parameters based on this assumption resulted in reasonable values of capture cross section σ_n≈(10^-12-10^-13) cm² and trap concentration N_t≈5-10¹⁶ cm^-3

Keywords

1/f noise; III-V semiconductors; aluminium compounds; field effect transistors; gallium compounds; semiconductor device measurement; semiconductor device noise; wide band gap semiconductors; 30 nm; 4N-SiC substrates; GR noise; GaN-AlGaN; GaN/AlGaN HFET; LF noise measurements; SiC; activation energy; capture cross section; g-r noise study; generation-recombination noise; heterostructure FETs; heterostructure field effect transistors; local levels; low-frequency noise; thin AlGaN barrier layer; trap concentration; Acoustical engineering; Aluminum gallium nitride; Computer aided manufacturing; Gallium nitride; HEMTs; Low-frequency noise; MODFETs; Noise generators; Noise level; Silicon carbide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906447

Filename

906447