DocumentCode
1446133
Title
Temperature dependent transport properties in GaN, AlxGa 1-xN, and InxGa1-xN semiconductors
Author
Anwar, A.F.M. ; Wu, Shangli ; Webster, Richard T.
Author_Institution
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA
Volume
48
Issue
3
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
567
Lastpage
572
Abstract
Ensemble Monte Carlo simulation is used to determine the electron saturation velocity and low-field mobility for AlxGa1-x N and InxGa1-xN. Acoustic phonon, optical phonon, intervalley, ionized impurity, alloy, and piezoelectric scattering are included in the simulation. Doping concentration ranging from 1017 cm-3 to 1019 cm-3 is considered in the temperature range from 50 K to 500 K, Theoretical calculation shows excellent agreement with low-field mobility experimental data. Empirical expressions for low field mobility and saturation velocity are provided as functions of temperature, doping concentration and mole fraction
Keywords
III-V semiconductors; Monte Carlo methods; aluminium compounds; digital simulation; electron mobility; electron-phonon interactions; gallium compounds; impurity scattering; indium compounds; piezoelectricity; 50 to 500 K; AlxGa1-xN; AlGaN; GaN; InxGa1-xN; InGaN; acoustic phonon scattering; alloy scattering; composition dependence; doping concentration dependence; electron low-field mobility; electron saturation velocity; ensemble Monte Carlo simulation; intervalley scattering; ionized impurity scattering; optical phonon scattering; piezoelectric scattering; semiconductors; temperature dependent transport properties; Aluminum alloys; Doping; Electron mobility; Electron optics; Gallium nitride; Impurities; Optical saturation; Optical scattering; Phonons; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.906452
Filename
906452
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