Concurrent NBTI and Hot-Carrier Degradation in p-Channel MuGFETs

Author

Kim, Tae Ha ; Yu, Chong Gun ; Park, Jong Tae

Author_Institution

Dept. of Electron. Eng., Univ. of Incheon, Incheon, South Korea

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

294

Lastpage

296

Abstract

The experimental investigations on the concurrent negative-bias temperature instability (NBTI) and hot-carrier (HC) degradation in p-channel MuGFETs have been performed with different side-surface orientations and fin widths. The observed result of the enhanced HC degradation at elevated temperature is due to the interaction between NBTI and HC degradations. The enhanced concurrent effects for 0° rotated fin body, which has (100) of top surface and (110) of side surface, could be explained by NBTI induced HC degradation. The enhanced concurrent effects with an increase of fin width could be explained by self-heating-induced the enhanced NBTI degradation.

Keywords

MOSFET; hot carriers; semiconductor device reliability; concurrent negative-bias temperature instability; fin width; hot carrier degradation; p-channel MuGFET; rotated fin body; self-heating induced; side-surface orientations; Degradation; Hot carriers; Logic gates; MOSFET circuits; MOSFETs; Stress; Hot carriers (HCs); multiple-gate MOSFET; negative-bias temperature instability (NBTI); silicon-on-insulator technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2103296

Filename

5710656