DocumentCode
1446954
Title
A two-path bandpass ΣΔ modulator for digital IF extraction at 20 MHz
Author
Ong, Adrian K. ; Wooley, Bruce A.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
Volume
32
Issue
12
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
1920
Lastpage
1934
Abstract
Oversampled bandpass A/D converters based on sigma-delta (ΣΔ) modulation can be used to robustly digitize the types of narrowband intermediate frequency (IF) signals that arise in radios and cellular systems. This paper proposes a two-path architecture for a fourth-order, bandpass modulator that is more tolerant of analog circuit limitations at high sampling speeds than conventional implementations based on the use of switched-capacitor biquadratic filters. An experimental prototype employing the two-path topology has been integrated in a 0.6-μm, single-poly, triple-metal CMOS technology with capacitors synthesized from a stacked metal structure. Two interleaved paths clocked at 40 MHz digitize a 200-kHz bandwidth signal centered at 20 MHz with 75 dB of dynamic range while suppressing the undesired mirror image signal by 42 dB. At low input signal levels, the mixing of spurious tones at DC and fs/2 with the input appears to degrade the performance of the modulator; out-of-band sinusoidal dither is shown to be an effective means of avoiding this degradation. The experimental modulator dissipates 72 mW from a 3.3 V supply
Keywords
CMOS integrated circuits; cellular radio; mixed analogue-digital integrated circuits; modulators; radio receivers; sigma-delta modulation; 0.6 micron; 1 to 2 GHz; 20 MHz; 200 kHz; 3.3 V; 40 MHz; 72 mW; bandpass A/D converters; cellular systems; digital IF extraction; fourth-order bandpass modulator; high sampling speeds; interleaved paths; narrowband IF signals; out-of-band sinusoidal dither; oversampled bandpass ADC; radios; sigma-delta modulation; single-poly triple-metal CMOS technology; stacked metal structure; two-path architecture; two-path bandpass ΣΔ modulator; Analog circuits; CMOS technology; Degradation; Delta-sigma modulation; Digital modulation; Digital-to-frequency converters; Frequency conversion; Narrowband; RF signals; Robustness;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.643650
Filename
643650
Link To Document