DocumentCode
1447896
Title
Physical and Electrical Characterization of Metal–Insulator–Metal Capacitors With 
and  capacitors with Sm<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> laminated dielectrics featuring low quadratic voltage coefficient of capacitance (VCC) and high capacitance density for precision analog circuit applications. In comparison with a HfO<sub>2</sub> MIM dielectric, the Sm<sub>2</sub>O<sub>3</sub> MIM dielectric is found to show a smaller quadratic VCC and a similar dielectric constant. We also investigated the cancellation of the positive quadratic VCC of Sm<sub>2</sub>O<sub>3</sub> through its combination with a SiO<sub>2</sub> layer having a negative quadratic VCC. Thus, MIM capacitors with a Sm<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> laminated dielectric were fabricated with various Sm<sub>2</sub>O<sub>3</sub> and SiO<sub>2</sub> thickness combinations. Capacitors with the Sm<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub> laminated dielectric exhibit tunable quadratic VCC and high capacitance density. Very low quadratic VCC at various capacitance densities were achieved. The leakage current mechanism is related to Poole-Frenkel emission at a high positive bias. A smaller quadratic VCC is obtained at higher frequencies. We also conducted an extensive physical characterization of Sm<sub>2</sub>O<sub>3</sub> using transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>MIM devices; Poole-Frenkel effect; X-ray diffraction; X-ray photoelectron spectra; capacitance; capacitors; dielectric materials; laminates; leakage currents; permittivity; samarium compounds; silicon compounds; transmission electron microscopy; MIM capacitors; MIM dielectric; Poole-Frenkel emission; Sm<sub>2</sub>O<sub>3</sub>; Sm<sub>2</sub>O<sub>3</sub>-SiO<sub>2</sub>; X-ray diffraction; X-ray photoelectron spectroscopy; analog circuit; capacitance density; dielectric constant; laminated dielectrics; leakage current mechanism; metal-insulator-metal capacitors; quadratic voltage coefficient; transmission electron microscopy; Analog circuits; Capacitance; Dielectric constant; Frequency; Hafnium oxide; Leakage current; Low voltage; MIM capacitors; Metal-insulator structures; Tunable circuits and devices; <formula formulatype=)
$hbox{SiO}_{2}$ ; $hbox{Sm}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2030539
Filename
5256242
Link To Document