Modification of the exchange bias effect by He ion irradiation

Author

Mougin, A. ; Mewes, T. ; Lopusnik, R. ; Jung, M. ; Engel, D. ; Ehresmann, A. ; Schmoranzer, H. ; Fassbender, J. ; Hillebrands, B.

Author_Institution

Fachbereich Phys., Kaiserslautern Univ., Germany

Volume

36

Issue

5

fYear

2000

fDate

9/1/2000 12:00:00 AM

Firstpage

2647

Lastpage

2649

Abstract

FeNi/FeMn exchange bias samples with a large exchange bias field at room temperature have been prepared. Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by about 70%. Above a threshold dose of 0.3·1¹⁵ ions/cm², the exchange bias field decreases continuously as the ion dose increases. The observed modifications can be explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing

Keywords

coercive force; exchange interactions (electron); ion beam effects; ion beam mixing; iron alloys; magnetic domain walls; magnetic multilayers; manganese alloys; nickel alloys; FeNi-FeMn; FeNi/FeMn; He ion irradiation; atomic intermixing; coercive field; defect creation; domain walls; exchange bias effect modification; ion dose dependence; pinning sites; Antiferromagnetic materials; Chemicals; Helium; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Magnetization; Microscopy; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.908547

Filename

908547