• DocumentCode
    1448782
  • Title

    A single-chip Zero-IF down-converter in SiGe:C BiCMOS technology for WLAN 802.11a

  • Author

    Jato, Y. ; Herrera, A.

  • Author_Institution
    Dept. de Ing. de Comun., Univ. de Cantabria, Santander, Spain
  • Volume
    7
  • Issue
    2
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    127
  • Lastpage
    132
  • Abstract
    This paper presents the contamination levels, obtained applying the Equivalent Salt Deposit Density ESDD methodology in nine distribution circuits and five substations, belonging to ELECTRICARIBE S.A. E.S.P., and located in the north area of Barranquilla, the main Colombian Atlantic Ocean port. The paper shows the different study stages such as the sampling places selection and configuration, the ESDD measurement procedures and the results evaluation applying statistical techniques.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; statistical analysis; wireless LAN; BiCMOS technology; ESDD measurement; SiGe:C; WLAN; equivalent salt deposit density; sampling places; single-chip; statistical techniques; zero-IF down-converter; BiCMOS integrated circuits; Contamination; Image converters; Insulation; Marine technology; Oceans; Sampling methods; Sea measurements; Substations; Wireless LAN; Direct conversion; LNA; SiGe; WLAN; mixer;
  • fLanguage
    English
  • Journal_Title
    Latin America Transactions, IEEE (Revista IEEE America Latina)
  • Publisher
    ieee
  • ISSN
    1548-0992
  • Type

    jour

  • DOI
    10.1109/TLA.2009.5256819
  • Filename
    5256819