DocumentCode
1448782
Title
A single-chip Zero-IF down-converter in SiGe:C BiCMOS technology for WLAN 802.11a
Author
Jato, Y. ; Herrera, A.
Author_Institution
Dept. de Ing. de Comun., Univ. de Cantabria, Santander, Spain
Volume
7
Issue
2
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
127
Lastpage
132
Abstract
This paper presents the contamination levels, obtained applying the Equivalent Salt Deposit Density ESDD methodology in nine distribution circuits and five substations, belonging to ELECTRICARIBE S.A. E.S.P., and located in the north area of Barranquilla, the main Colombian Atlantic Ocean port. The paper shows the different study stages such as the sampling places selection and configuration, the ESDD measurement procedures and the results evaluation applying statistical techniques.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; statistical analysis; wireless LAN; BiCMOS technology; ESDD measurement; SiGe:C; WLAN; equivalent salt deposit density; sampling places; single-chip; statistical techniques; zero-IF down-converter; BiCMOS integrated circuits; Contamination; Image converters; Insulation; Marine technology; Oceans; Sampling methods; Sea measurements; Substations; Wireless LAN; Direct conversion; LNA; SiGe; WLAN; mixer;
fLanguage
English
Journal_Title
Latin America Transactions, IEEE (Revista IEEE America Latina)
Publisher
ieee
ISSN
1548-0992
Type
jour
DOI
10.1109/TLA.2009.5256819
Filename
5256819
Link To Document