DocumentCode
1449019
Title
Design Considerations for 60 GHz Transformer-Coupled CMOS Power Amplifiers
Author
Chowdhury, Debopriyo ; Reynaert, Patrick ; Niknejad, Ali M.
Author_Institution
Berkeley Wireless Res. Center, Univ. of California at Berkeley, Berkeley, CA, USA
Volume
44
Issue
10
fYear
2009
Firstpage
2733
Lastpage
2744
Abstract
This work discusses the design methodologies for efficient power generation at mm-wave frequencies in CMOS. Passive elements play an important role in PA design, as they determine both the output power and power gain of the circuit. In this work, we have developed a methodology for design of transformer-coupled power amplifiers. A distributed model of on-chip transformers has been developed that can predict the performance up to very high frequencies, is length scalable and uses only a few parameters , compared to a complete lumped model. Using the model, a two-stage transformer-coupled PA has been designed in 90 nm CMOS. The prototype has one of the highest output powers reported for a 60 GHz CMOS PA. A three-stage improved design with higher gain and efficiency is reported, stressing the importance of driver stage design at these frequencies. The PA has been integrated into a complete transmitter and tested with 10 Gb/s QPSK modulated data.
Keywords
CMOS integrated circuits; millimetre wave amplifiers; millimetre wave integrated circuits; power amplifiers; QPSK modulated data; bit rate 10 Gbit/s; frequency 60 GHz; passive elements; size 90 nm; transformer-coupled CMOS power amplifiers; Circuits; Design methodology; Frequency; Power amplifiers; Power generation; Predictive models; Prototypes; Semiconductor device modeling; Transformers; Transmitters; CMOS power amplifier; mm-wave; power amplifiers; transformers;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2009.2028752
Filename
5256988
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