A two-phase GaAs cermet gate charge-coupled device

Author

Lenoble, Maurice ; Cresswell, John V. ; Johnson, R.R.

Author_Institution

TRIUMF, Vancouver, BC, Canada

Volume

37

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1796

Lastpage

1799

Abstract

The design, fabrication, and operation of a 64-pixel, two-phase GaAs cermet gate charge-coupled device (CMCCD) is described. A castellated channel geometry provides the built-in electric field for directing the flow of signal charge within the CMCCD channel. A two-dimensional computer model for the electrostatic potential within a single pixel of the CMCCD is used to verify the presence of the built-in electric field and is used to show the possibility of the existence of energy troughs under the cermet gates. Energy troughs within the CMCCD are undesirable, as they increase the dispersion of signal charge through the device. It is shown that the energy troughs are overcome by increasing the clock voltage amplitude. A 64-pixel, two-phase CMCCD demonstrated a charge-transfer efficiency of 0.996 when operated at 46 MHz

Keywords

III-V semiconductors; charge-coupled device circuits; gallium arsenide; semiconductor device models; 46 MHz; 64 pixel; 64 stage CCD; 99.6 percent; GaAs; built-in electric field; castellated channel geometry; cermet gate charge-coupled device; cermet gates; charge-transfer efficiency; clock voltage amplitude; design; electrostatic potential; energy troughs; fabrication; operation; semiconductors; two-dimensional computer model; two-phase CCD; Ceramics; Charge coupled devices; Charge transfer; Clocks; Electrodes; Fabrication; Gallium arsenide; MESFETs; Schottky barriers; VHF circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57128

Filename

57128