Transient measurements of SOI body contact effectiveness

A technique for characterizing the effectiveness of SOI MOSFET body contacts under transient conditions, by measuring the transient lateral bipolar current in a SOI pass gate, is demonstrated. Using this technique, the minimum rise or fall edge rate required to guarantee that the body potential over the device width follows the contact potential is defined. While this technique is applied specifically to a Schottky body tie, it can be generalized to other technologies and other body ties.