Comprehensive analysis of reverse short-channel effect in silicon MOSFETs from low-temperature operation

Author

Szelag, B. ; Balestra, F. ; Ghibaudo, Gerard

Author_Institution

Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France

Volume

19

Issue

12

fYear

1998

Firstpage

511

Lastpage

513

Abstract

The reverse short channel effect (RSCE) is a major issue for deep-submicron CMOS technologies. In this paper, the RSCE is studied over a wide range of temperature (from 300 K down to 30 K). It is shown that the temperature lowering results in a significant reduction of the RSCE. Moreover, we show using these low temperature experiments that the RSCE arises from an excess doping concentration near the source and drain as supported from both analytical modeling and two-dimensional (2-D) numerical simulation.

Keywords

MOSFET; cryogenic electronics; doping profiles; elemental semiconductors; semiconductor device models; silicon; 2D numerical simulation; 30 to 300 K; CMOSFETs; RSCE; Si MOSFET; analytical modeling; deep-submicron CMOS technologies; excess doping concentration; low-temperature operation; reverse short-channel effect; Analytical models; CMOS technology; Doping; MOSFET circuits; Numerical simulation; Semiconductor device modeling; Semiconductor process modeling; Silicon; Temperature distribution; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.735763

Filename

735763