DocumentCode
1450519
Title
A 1024-element high-performance silicon tactile imager
Author
Suzuki, Kenichiro ; Najafi, Khalil ; Wise, Kensall D.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
37
Issue
8
fYear
1990
fDate
8/1/1990 12:00:00 AM
Firstpage
1852
Lastpage
1860
Abstract
A 32×32-element capacitive silicon tactile imager, for use in precision robotics applications where high density and high resolution are important, is discussed. The silicon chip measures 1.6 cm×1.6 cm, and is organized in an X -Y matrix of 1024 capacitor elements on 0.5-mm centers. The process uses two boron diffusions (deep and shallow) followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. This results in a thick center plate for the sense capacitor supported by thinner beams. Only four noncritical masking steps for silicon and two for glass are required. A measured force sensitivity of 0.27 pF/gmf/element, temperature sensitivity of less than 3o p.p.m./°C, and maximum operating force of ≈1 gm/element has been obtained. A discrete data acquisition system used with the device offers over 6 b of force resolution, and the imager can be read at a rate of 15-20 μs/element, offering an effective frame rate of 5.1 ms
Keywords
capacitors; electric sensing devices; elemental semiconductors; integrated circuit technology; silicon; tactile sensors; 1.6 cm; 1024 pixel; 15 to 20 mus; 5.1 ms; Si tactile imager; force resolution; force sensitivity; four noncritical masking steps; frame rate; high resolution; maximum operating force; precision robotics applications; sense capacitor; temperature sensitivity; unmasked wafer dissolution; Boron; Capacitors; Diffusion bonding; Electrostatic measurements; Force measurement; Image resolution; Robots; Semiconductor device measurement; Silicon; Wafer bonding;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.57136
Filename
57136
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