Increased throughput for the testing and repair of RAMs with redundancy

Author

Haddad, Ramsey W. ; Dahbura, Anton T. ; Sharma, Anup B.

Author_Institution

Digital Equipment Corp., Palo Alto, CA, USA

Volume

40

Issue

2

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

154

Lastpage

166

Abstract

The problem of determining whether a redundant random-access memory (RRAM) containing faulty memory cells can be repaired with spare rows and columns is discussed. The approach is to increase the number of working RRAMs manufactured per unit time, rather than per wafer, by presenting a computationally efficient algorithm for detecting unrepairability, a computationally efficient algorithm for optimal repair for special patterns of faulty memory cells and online algorithms that can find an optimal repair or else detect unrepairability during memory testing, aborting unnecessary testing. Experimental validation of the approach is given that is based on industrial device fabrication data

Keywords

integrated circuit testing; integrated memory circuits; random-access storage; RRAM; computationally efficient algorithm; faulty memory cells; industrial device fabrication data; memory testing; online algorithms; optimal repair; redundancy; redundant random-access memory; repair; testing; unrepairability; Computer aided manufacturing; Costs; Fabrication; Fault detection; Production; Random access memory; Read-write memory; Redundancy; Testing; Throughput;

fLanguage

English

Journal_Title

Computers, IEEE Transactions on

Publisher

ieee

ISSN

0018-9340

Type

jour

DOI

10.1109/12.73586

Filename

73586