AlGaN/GaN HEMT With Distributed Gate for Channel Temperature Reduction

Author

Darwish, Ali M. ; Hung, H. Alfred ; Ibrahim, Amr A.

Author_Institution

Army Res. Lab. (ARL), Adelphi, MD, USA

Volume

60

Issue

4

fYear

2012

fDate

4/1/2012 12:00:00 AM

Firstpage

1038

Lastpage

1043

Abstract

Self heating in electronic devices reduces their performance and lifetime. A novel high electron-mobility transistor (HEMT) layout that reduces the channel temperature is presented. To decrease self heating, the new distributed gate (DG) HEMT is configured with multiple, active, and nonactive sections along each gate-stripe. Simulations and experimental results indicating the improved performance of the new layout are presented. Compared to a conventional HEMT, the fabricated novel DG GaN HEMT demonstrated a decrease in channel temperature from 178 °C to 150 °C, accompanied by a 3-dB increase in output power, and 13-fold increase in lifetime.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; channel temperature reduction; distributed gate HEMT; electronic devices; self heating; temperature 178 degC to 150 degC; Capacitance; Gallium nitride; HEMTs; Heating; Layout; Logic gates; Performance evaluation; Channel temperature; GaN high electron-mobility transistor (HEMT); reliability; thermal resistance;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2185948

Filename

6155066