Highly stable microwave performance of InP/InGaAs HIGFETs

Author

Martin, E.A. ; Aina, O.A. ; Iliadis, A.A. ; Mattingly, M.R. ; Hempfling, E.

Author_Institution

Allied-Signal Aerosp. Co., Columbia, MD, USA

Volume

37

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1916

Lastpage

1917

Abstract

The fabrication and microwave performance of InP/InGaAs heterojunction insulated-gate FETs (HIGFETs) using plasma-enhanced chemical vapor deposition (PECVD)-deposited SiO₂ as the gate insulator are discussed. Extrinsic transconductances as high as 240 mS/mm were obtained. Although these devices had a drain current drift of 20% under DC bias, when operated at 5 GHz they exhibited negligible drain current drift. The observation of high transconductance and stable microwave performance makes these HIGFETs ideal candidates for microwave power applications

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; insulated gate field effect transistors; solid-state microwave devices; 5 GHz; HIGFETs; InP-InGaAs; PECVD; SHF; SiO₂ gate dielectric; fabrication; gate insulator; heterojunction insulated-gate FETs; microwave performance; microwave power applications; plasma-enhanced chemical vapor deposition; semiconductors; transconductance; FETs; Fabrication; Heterojunctions; Indium gallium arsenide; Indium phosphide; Insulation; Microwave devices; Plasma chemistry; Plasma devices; Plasma stability;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57144

Filename

57144