DocumentCode
1452800
Title
Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates
Author
Yablonovitch, E. ; Kapon, E. ; Gmitter, T.J. ; Yun, C.P. ; Bhat, R.
Author_Institution
Bellcore Navesink Res. Center, Red Bank, NJ, USA
Volume
1
Issue
2
fYear
1989
Firstpage
41
Lastpage
42
Abstract
The epitaxial liftoff approach has been attracting increasing interest as an alternative to lattice-mismatched heteroepitaxy. A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported. This presages the integration of the two major optical communication materials, III-V semiconductor crystals with SiO/sub 2/ glass.<>
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor epitaxial layers; semiconductor junction lasers; GaAs-AlGaAs double heterostructure; III-V semiconductor; SiO/sub 2/ glass; epitaxial liftoff approach; lattice-mismatched heteroepitaxy; Crystalline materials; Diode lasers; Gallium arsenide; Glass; III-V semiconductor materials; Optical fiber communication; Optical materials; Semiconductor thin films; Substrates; Transistors;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.91003
Filename
91003
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