High-frequency electrooptic Fabry-Perot modulators

Author

Simes, R.J. ; Yan, R.H. ; Barron, C.C. ; Derrickson, D. ; Lishan, D.G. ; Karin, J. ; Coldren, L.A. ; Rodwell, M. ; Elliot, S. ; Hughes, B.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

6

fYear

1991

fDate

6/1/1991 12:00:00 AM

Firstpage

513

Lastpage

515

Abstract

Electrooptic modulators built from GaAs/Al/sub x/Ga/sub 1-x/As Fabry-Perot cavities operating up to 6.5 GHz are reported. The measured frequency response agrees well with the one predicted using an equivalent circuit model derived from high-speed electrical measurements. The parasitic capacitances have been reduced to approximately 30 fF by fabricating the devices on semi-insulating GaAs substrates and integrating them with on-wafer bound pads which have dimensions compatible with microwave coplanar probes.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optoelectronics; optical modulation; 6.5 GHz; GaAs-Al/sub x/Ga/sub 1-x/As; III-V semiconductors; equivalent circuit model; frequency response; high frequency electrooptic Fabry-Perot modulators; high-speed electrical measurements; microwave coplanar probes; on-wafer bound pads; parasitic capacitances; semiinsulating GaAs substrates; Electric variables measurement; Electrooptic modulators; Equivalent circuits; Fabry-Perot; Frequency measurement; Frequency response; Gallium arsenide; Integrated circuit measurements; Parasitic capacitance; Predictive models;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.91018

Filename

91018