Electric currents through ion tracks in silicon devices

A modified form of Ohm´s law, describing electric currents through ion tracks, is presented as a tool for future theoretical modeling efforts related to charge collection from ion tracks in silicon devices. The equation is rigorously derived from the drift/diffusion equations and accounts for all currents (electron and hole, drift, and diffusion). While only one quantitative result is given, a fairly complete description of charge collection from ion tracks in silicon diodes is qualitatively discussed