DocumentCode
1453303
Title
Wideband semiconductor optical amplifier steady-state numerical model
Author
Connelly, Michael J.
Author_Institution
Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland
Volume
37
Issue
3
fYear
2001
fDate
3/1/2001 12:00:00 AM
Firstpage
439
Lastpage
447
Abstract
A wideband steady-state model and efficient numerical algorithm for a bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier is described. The model is applicable over a wide range of operating regimes. The relationship between spontaneous emission and material gain is clarified. Simulations and comparisons with experiment are given which demonstrate the versatility of the model
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser theory; semiconductor device models; semiconductor optical amplifiers; spontaneous emission; InP-InGaAsP; bulk InP-InGaAsP homogeneous buried ridge stripe semiconductor optical amplifier; material gain; operating regimes; spontaneous emission; wideband semiconductor optical amplifier steady-state numerical model; Numerical models; Optical amplifiers; Optical devices; Optical materials; Optical refraction; Photonic band gap; Semiconductor optical amplifiers; Spontaneous emission; Steady-state; Stimulated emission;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.910455
Filename
910455
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