DocumentCode
1453323
Title
Megaelectronvolt phosphorus implantation for bipolar devices
Author
Böhm, Hans-joachim ; Bernewitz, Lore ; Böhm, Willi R. ; Köpl, Rupert
Author_Institution
Siemens AG, Munich, West Germany
Volume
35
Issue
10
fYear
1988
fDate
10/1/1988 12:00:00 AM
Firstpage
1616
Lastpage
1619
Abstract
The use of megaelectronvolt phosphorus implantation in the formation of the buried layer of bipolar transistors was investigated. The main focus was on the reduction of the secondary defect density. The lowest defect density is obtained with annealing by rapid thermal processing (1150°C/60 s). Results on electrical characteristics of bipolar transistors with megaelectronvolt-implanted buried layers are presented and compared with those of conventional devices
Keywords
annealing; bipolar transistors; ion implantation; 1150 degC; 60 s; P; annealing; bipolar devices; bipolar transistors; buried layer; electrical characteristics; megaelectronvolt implantation; rapid thermal processing; secondary defect density; BiCMOS integrated circuits; Bipolar transistors; Conductivity; Electric variables; Epitaxial layers; Heat treatment; Ion implantation; Rapid thermal annealing; Rapid thermal processing; Surface resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.7362
Filename
7362
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