5-mW and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler

Author

Melique, X. ; Mann, C. ; Mounaix, P. ; Thornton, J. ; Vanbesien, O. ; Mollot, F. ; Lippens, D.

Author_Institution

Inst. d´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´Ascq, France

Volume

8

Issue

11

fYear

1998

Firstpage

384

Lastpage

386

Abstract

We report on record performance in terms of efficiency and output power for an InP-based heterostructure barrier varactor (HBV) tripler. Owing to a step-like InGaAs/InAlAs/AlAs barrier scheme, the device exhibits excellent voltage handling with low leakage current (10 A/cm²) up to at least 5 V. A 4×12 μm² finger-shaped device in a dual configuration yielded a delivered output power of 5 mW (5.4% conversion efficiency) at 216 GHz.

Keywords

III-V semiconductors; aluminium compounds; frequency multipliers; gallium arsenide; indium compounds; leakage currents; millimetre wave frequency convertors; varactors; 216 GHz; 5 mW; 5.4 percent; InGaAs-InAlAs-AlAs; InP; conversion efficiency; dual configuration; finger-shaped device; heterostructure barrier varactor tripler; leakage current; output power; voltage handling; Fabrication; Heterojunctions; Indium compounds; Indium gallium arsenide; Laboratories; Leakage current; Power generation; Radio frequency; Resists; Varactors;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.736253

Filename

736253