Modeling of the subthreshold characteristics of SOI MOSFETs with floating body

Author

Matloubian, Mishel ; Chen, C.-E.D. ; Mao, Bor-yen ; Sundaresan, Ravishankar ; Pollack, Gordon P.

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1985

Lastpage

1994

Abstract

n-channel SOI MOSFETs with floating bodies show a threshold voltage shift and an improvement in subthreshold slope at high drain biases. The magnitude of this effect depends on the device parameters and the starting SOI substrate. A simple device model is presented that explains the observed characteristics to be due to MOS back-bias effects resulting from the positively charged floating body. The improvement in the subthreshold slope is the outcome of positive feedback between the body potential and the transistor channel current

Keywords

insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; MOS back-bias effects; SOI MOSFETs; body potential; device parameters; floating body; high drain biases; positive feedback; positively charged floating body; simple device model; starting substrate; subthreshold characteristics; subthreshold slope; threshold voltage shift; transistor channel current; CMOS process; Circuit optimization; Feedback; Instruments; Isolation technology; MOSFETs; Process design; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57160

Filename

57160