3-D computer simulation of single-electron charging in silicon nanocrystal floating gate flash memory devices

Author

Thean, A. ; Leburton, J.P.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

22

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

148

Lastpage

150

Abstract

The operation of a silicon nanocrystal quantum-dot based flash memory device is simulated numerically with emphasis on energy and charge quantization in the quantum-dot. The simulation involves the self-consistent solution of three-dimensional (3-D) Poisson and Schrodinger-like equations, with the Slater rule for determining the charging voltage. We also compute the capacitance-voltage characteristics of the device and derive the threshold voltage, V/sub T/, variation with single-electron charging as a function of design parameters.

Keywords

MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; flash memories; nanostructured materials; quantum interference devices; semiconductor device models; semiconductor quantum dots; silicon; MOSFET; Poisson equation; Schrodinger equation; Si; Slater rule; capacitance-voltage characteristics; charge quantization; charging voltage; energy quantization; floating gate flash memory device; nonvolatile memory; self-consistent model; silicon nanocrystal quantum dot; single electron charging; three-dimensional computer simulation; threshold voltage; Computational modeling; Computer simulation; Flash memory; Nanocrystals; Numerical simulation; Poisson equations; Quantization; Quantum dots; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.910625

Filename

910625