Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions

Author

Qian, Feng ; Song, Qi ; Tien, En-Kuang ; Kalyoncu, Salih K. ; Huang, Yuewang ; Boyraz, Ozdal

Author_Institution

Electr. & Comput. Sci. Dept., Univ. of California, Irvine, CA, USA

Volume

47

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

327

Lastpage

334

Abstract

Silicon waveguides integrated with doped dielectric gain media may allow the design of planar light sources with electronic control. In this paper, the effects of design geometries and nonlinear losses on the gain in crystalline silicon waveguides with erbium-doped regions are investigated. We show that by using multitrench geometries, the power confinement can be increased and higher gain-to-nonlinear-loss ratio achieved. Net gain can be improved as much as 0.38 dB/cm in multitrench waveguides compared to single-trench waveguides.

Keywords

elemental semiconductors; erbium; integrated optics; nonlinear optics; optical design techniques; optical losses; optical waveguides; silicon; JkJk:Er-Si; design geometries; doped dielectric gain media; electronic control; erbium doping; gain-to-nonlinear-loss ratio; integrated silicon waveguides; multitrench geometries; multitrench waveguides; nonlinear losses; planar light sources; power confinement; single-trench waveguides; Absorption; Aluminum oxide; Erbium; Gain; Geometry; Optical waveguides; Silicon; Erbium; integrated optics; laser amplifiers; waveguides;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2088379

Filename

5716920