Effects of 3 MeV proton irradiation on the excitonic lifetime in gallium arsenide

Author

Khanna, Shyam M. ; Charbonneau, Sylvain ; Piva, Paul G. ; Parenteau, Martin ; Carlone, Cosmo

Author_Institution

Dept. of Nat. Defence, Defence Res. Establ., Ottawa, Ont., Canada

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2430

Lastpage

2435

Abstract

Gallium arsenide films grown by the metalorganic chemical vapour deposition method and doped n-type with silicon to concentrations of 2×10¹⁵ and 2×10¹⁶ cm^-3 were exposed at room temperature to 3 MeV proton irradiation in the fluence range 10⁹ to 10¹⁴ cm^-2. The photoluminescence spectra of the irradiated samples were obtained in the continuous mode. The free exciton transition at 1.515 eV was observed. The lifetime associated with this transition was measured both at 4 K and at 60 K, using a time-correlated single photon counting technique. The damage constant associated with the radiative recombination lifetime of the free exciton in GaAs is (7.7±2.2)×10^-3 cm ² s^-1 and with the nonradiative lifetime (6.5±2.7)×10^-3 cm² s^-1

Keywords

III-V semiconductors; MOCVD coatings; excitons; gallium arsenide; photoluminescence; proton effects; radiative lifetimes; semiconductor thin films; 3 MeV; 4 K; 60 K; GaAs:Si; damage constant; free exciton transition; gallium arsenide film; metalorganic chemical vapour deposition; n-type silicon doping; nonradiative lifetime; photoluminescence spectra; proton irradiation; radiative recombination lifetime; single photon counting; Communication switching; Excitons; Gallium arsenide; Iron; Optical films; Photoluminescence; Protons; Semiconductor device doping; Semiconductor films; Temperature distribution;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736482

Filename

736482