Comments, with reply, on "One-dimensional non-quasi-static models for arbitrarily and heavily doped quasi-neutral layers in bipolar transistors" by B. Wu and F. Lindholm

For original paper see ibid., vol.36, pp.727-37 (April 1989). The accuracy of state-of-the-art AC models for the emitter and base of bipolar transistors is examined in order to clear up some confusion that the commenter believes results from original paper concerning the distinctions between a base transport model and that of J. Seitchik et al. (see IEDM Tech. Dig., pp.244-7, 1987). The authors respond with further discussion of emitter-transport and base-transport models and concede that they may have made mistakes in their comparison with the results of Seitchik et al.<>