• DocumentCode
    1455640
  • Title

    Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regime

  • Author

    Jeckelmann, Beat ; Jeanneret, Blaise

  • Author_Institution
    Swiss Federal Office of Metrol., Wabern, Switzerland
  • Volume
    46
  • Issue
    2
  • fYear
    1997
  • fDate
    4/1/1997 12:00:00 AM
  • Firstpage
    276
  • Lastpage
    280
  • Abstract
    The influence of the contacts on the value of the quantized Hall resistance has been studied in a series of high-precision measurements. Deviations of the Hall resistance of up to 0.35 μΩ/Ω from the expected value were observed in a device in which the resistance of one of the voltage contacts used in the measurement was comparable to the Hall resistance. The edge-state theory of contacts gives no satisfactory estimate for the observed deviations
  • Keywords
    electric resistance measurement; quantum Hall effect; units (measurement); Hall resistance; edge-state theory; four-terminal quantized Hall resistance; high-precision measurement; nonlinear regime; voltage contacts; Contact resistance; Current measurement; Electrical resistance measurement; Electrons; Gallium arsenide; Geometry; Guidelines; Metrology; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/19.571831
  • Filename
    571831