• DocumentCode
    1457434
  • Title

    Photoacoustic and OBIC measurements on planar high-voltage p+ -n junctions

  • Author

    Flohr, Thomas ; Helbig, Reinhard

  • Author_Institution
    Inst. fur Angewandte Phys., Erlangen-Nurnberg Univ., West Germany
  • Volume
    35
  • Issue
    10
  • fYear
    1988
  • fDate
    10/1/1988 12:00:00 AM
  • Firstpage
    1683
  • Lastpage
    1686
  • Abstract
    The photoacoustic technique is introduced as a tool for spatially resolved investigations on Si power devices. Photoacoustic and optical-beam-induced current (OBIC) measurements are combined to yield local information about the electric field distribution in a thin surface layer of a reverse-biased planar p+-n diode. The experimental results are described within the framework of a simple linear one-dimensional theory for the optical-beam-induced current and the photoacoustic signal
  • Keywords
    elemental semiconductors; photoacoustic spectra; semiconductor diodes; silicon; OBIC measurements; Si power devices; electric field distribution; linear one-dimensional theory; optical-beam-induced current; photoacoustic technique; planar high-voltage p+-n junctions; reverse-biased planar p+-n diode; spatially resolved investigations; Absorption; Charge carrier processes; Electric variables measurement; Lamps; Optical beams; Optical surface waves; Power measurement; Semiconductor diodes; Signal generators; Spatial resolution;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.7373
  • Filename
    7373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1457434