Enhancement of high-temperature high-frequency performance of GaAs-based FETs by the high-temperature electronic technique

Author

Narasimhan, R. ; Sadwick, L.P. ; Hwu, Ruey J.

Author_Institution

Dept. of Electr. Eng., Utah Univ., Salt Lake City, UT, USA

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

24

Lastpage

31

Abstract

This paper reports the effects of high temperature on high-frequency/high-speed field effect transistors (FETs), particularly GaAs-based MESFETs and HEMTs. The high-temperature electronic technique (HTET) was employed to stabilize and improve the performance of these devices at high temperatures. This work focuses on detailed high-temperature experiments of high-frequency scattering parameters of various transistors. Comparable gain level to that obtained at room temperature was achieved at elevated temperature through the use of the HTET

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; UHF field effect transistors; gallium arsenide; high electron mobility transistors; high-temperature electronics; leakage currents; microwave field effect transistors; GaAs; HEMT; HTET; MESFET; gain level; high-frequency scattering parameters; high-temperature electronic technique; Cities and towns; FETs; Leakage current; MESFETs; Micromanipulators; Probes; Scattering parameters; Substrates; Temperature; Thermal conductivity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737437

Filename

737437