• DocumentCode
    1457843
  • Title

    Numerical calculation of electromigration under pulse current with Joule heating

  • Author

    Li, Zhihong ; Wu, Guoying ; Wang, Yangyuan ; Li, Zhiguo ; Sun, Yinghua

  • Author_Institution
    Inst. of Microelectron., Beijing Univ., China
  • Volume
    46
  • Issue
    1
  • fYear
    1999
  • fDate
    1/1/1999 12:00:00 AM
  • Firstpage
    70
  • Lastpage
    77
  • Abstract
    Electromigration behavior under pulsed directional current (PDC) was investigated theoretically and experimentally. A vacancy diffusion equation under current stress was derived, and the relationship between vacancy concentration and time to failure was calculated numerically. The results show that if Joule heating is considered, the ratio of lifetime under PDC to that under DC is less than what was reported by other authors. In addition, the dependence of the lifetime on duty ratios and frequencies of PDC is not the same in different regimes of PDC frequencies. The analytical equation describing the relation between MTFPDC and MTFDC in the entire regime of frequencies, including Joule heating, is given. All calculated results are compared to experimental results
  • Keywords
    electromigration; failure analysis; integrated circuit interconnections; vacancies (crystal); IC metal interconnect; Joule heating; PDC frequency; current stress; duty ratio; electromigration; lifetime; mean time to failure; pulsed directional current; vacancy concentration; vacancy diffusion; Current density; Current measurement; Density measurement; Electromigration; Equations; Frequency measurement; Heating; Pulse measurements; Sun; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.737443
  • Filename
    737443