DocumentCode
1457843
Title
Numerical calculation of electromigration under pulse current with Joule heating
Author
Li, Zhihong ; Wu, Guoying ; Wang, Yangyuan ; Li, Zhiguo ; Sun, Yinghua
Author_Institution
Inst. of Microelectron., Beijing Univ., China
Volume
46
Issue
1
fYear
1999
fDate
1/1/1999 12:00:00 AM
Firstpage
70
Lastpage
77
Abstract
Electromigration behavior under pulsed directional current (PDC) was investigated theoretically and experimentally. A vacancy diffusion equation under current stress was derived, and the relationship between vacancy concentration and time to failure was calculated numerically. The results show that if Joule heating is considered, the ratio of lifetime under PDC to that under DC is less than what was reported by other authors. In addition, the dependence of the lifetime on duty ratios and frequencies of PDC is not the same in different regimes of PDC frequencies. The analytical equation describing the relation between MTFPDC and MTFDC in the entire regime of frequencies, including Joule heating, is given. All calculated results are compared to experimental results
Keywords
electromigration; failure analysis; integrated circuit interconnections; vacancies (crystal); IC metal interconnect; Joule heating; PDC frequency; current stress; duty ratio; electromigration; lifetime; mean time to failure; pulsed directional current; vacancy concentration; vacancy diffusion; Current density; Current measurement; Density measurement; Electromigration; Equations; Frequency measurement; Heating; Pulse measurements; Sun; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.737443
Filename
737443
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