A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

Author

Yang, Gi-Young ; Hur, Sung-Hoi ; Han, Chul-Hi

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

46

Issue

1

fYear

1999

fDate

1/1/1999 12:00:00 AM

Firstpage

165

Lastpage

172

Abstract

A physical-based analytical current model of poly-Si thin film transistors (TFT´s) for circuit simulation is presented. The model includes the barrier potential at grain boundaries, drain induced grain barrier lowering (DIGBL), temperature dependence, and the kink effect. The basic equation in the model has an analytic form for implementation in circuit simulators. The model has simple relationships between model parameters and device or material parameters. In addition to the current model, a capacitance model based on the current model is presented. Comparisons between the model and measured results show excellent agreement over wide ranges of operating voltages and for devices with different channel lengths

Keywords

circuit simulation; elemental semiconductors; grain boundaries; semiconductor device models; silicon; thin film transistors; Si; analytical model; barrier potential; capacitance; circuit simulation; drain induced grain barrier lowering; grain boundary; kink effect; polysilicon thin film transistor; temperature dependence; turn-on; Analytical models; Capacitance; Circuit simulation; Equations; Grain boundaries; Length measurement; Temperature dependence; Thin film circuits; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.737456

Filename

737456