• DocumentCode
    1458680
  • Title

    Single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs for power application

  • Author

    Shey-Shi Lu ; Yao-Wen Hsu ; Chin-Chun Meng ; Liang-Po Chen

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    20
  • Issue
    1
  • fYear
    1999
  • Firstpage
    21
  • Lastpage
    23
  • Abstract
    Single-voltage-supply operation of insulated-gate FETs using Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures for power application was demonstrated for the first time. It is found that the device can be operated with gate voltage up to 2 V without significant drain current compression. Because of this high gate operating voltage, single-voltage-supply operation of Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As insulated-gate FETs was achieved. Preliminary results show that for a 1-μm gate length device operated at 1.8 GHz under class A-bias condition, this power FET showed a 14.5-dBm (140 mW/mm) saturated power with a power added efficiency of 30% when the drain voltage is 4.8 V.
  • Keywords
    III-V semiconductors; UHF field effect transistors; gallium arsenide; gallium compounds; indium compounds; insulated gate field effect transistors; power field effect transistors; semiconductor device measurement; 1 mum; 1.8 GHz; 2 V; 30 percent; 4.8 V; DC I-V characteristics; Ga/sub 0.51/In/sub 0.49/P-In/sub 0.15/Ga/sub 0.85/As; Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As heterostructures; GaAs; GaInP/InGaAs power insulated-gate FET; class A-bias condition; drain current compression; drain voltage; gate length; gate voltage; high gate operating voltage; insulated-gate FET; power IGFET; power added efficiency; power application; saturated power; single-voltage-supply operation; Cellular phones; FETs; Fingers; Gallium arsenide; Insulation; MESFETs; Metal-insulator structures; PHEMTs; Schottky barriers; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.737561
  • Filename
    737561