DocumentCode
145987
Title
Energy efficiency and conversion in 1D and 2D electronics
Author
Pop, Eric ; English, Chris ; Feng Xiong ; Feifei Lian ; Serov, Andrey ; Zuanyi Li ; Islam, Shariful ; Dorgan, Vincent
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2014
fDate
22-26 Sept. 2014
Firstpage
35
Lastpage
37
Abstract
We review our recent studies at the intersection of energy, nanomaterials and nanoelectronics. Through careful high-field studies of two-dimensional (2D) devices based on graphene and MoS2, we have uncovered details regarding their physical properties and band structure. We have investigated thermoelectric effects in graphene transistors and phase-change memory (PCM) elements for low-power electronics. We find that low-power transistors and memory could be enhanced by built-in thermoelectric effects which are particularly pronounced at nanometer length scales. We have also examined heat flow in composites based on one-dimensional (1D) carbon nanotubes, and uncovered both the lower (diffusive) and upper (ballistic) limits of heat flow in 1D and 2D nanomaterials. Our results suggest fundamental limits and new applications that could be achieved through the co-design of geometry, interfaces, and selection of 1D and 2D nanomaterials.
Keywords
band structure; carbon nanotubes; field effect transistors; graphene; heat transfer; low-power electronics; molybdenum compounds; nanoelectronics; nanostructured materials; phase change memories; thermoelectricity; 1D carbon nanotubes; 1D electronics; 1D nanomaterials; 2D electronics; 2D nanomaterials; C; MoS2; band structure; energy conversion; energy efficiency; heat flow; low-power electronics; low-power transistors; nanoelectronics; phase change memory; thermoelectric effects; Conductivity; Films; Graphene; Heating; Phase change materials; Thermal conductivity; Transistors; MoS2; ballistic heat flow; carbon nanotubes; data storage; graphene; low-power transistors; thermoelectrics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference (ESSDERC), 2014 44th European
Conference_Location
Venice
ISSN
1930-8876
Print_ISBN
978-1-4799-4378-4
Type
conf
DOI
10.1109/ESSDERC.2014.6948751
Filename
6948751
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