• DocumentCode
    145987
  • Title

    Energy efficiency and conversion in 1D and 2D electronics

  • Author

    Pop, Eric ; English, Chris ; Feng Xiong ; Feifei Lian ; Serov, Andrey ; Zuanyi Li ; Islam, Shariful ; Dorgan, Vincent

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2014
  • fDate
    22-26 Sept. 2014
  • Firstpage
    35
  • Lastpage
    37
  • Abstract
    We review our recent studies at the intersection of energy, nanomaterials and nanoelectronics. Through careful high-field studies of two-dimensional (2D) devices based on graphene and MoS2, we have uncovered details regarding their physical properties and band structure. We have investigated thermoelectric effects in graphene transistors and phase-change memory (PCM) elements for low-power electronics. We find that low-power transistors and memory could be enhanced by built-in thermoelectric effects which are particularly pronounced at nanometer length scales. We have also examined heat flow in composites based on one-dimensional (1D) carbon nanotubes, and uncovered both the lower (diffusive) and upper (ballistic) limits of heat flow in 1D and 2D nanomaterials. Our results suggest fundamental limits and new applications that could be achieved through the co-design of geometry, interfaces, and selection of 1D and 2D nanomaterials.
  • Keywords
    band structure; carbon nanotubes; field effect transistors; graphene; heat transfer; low-power electronics; molybdenum compounds; nanoelectronics; nanostructured materials; phase change memories; thermoelectricity; 1D carbon nanotubes; 1D electronics; 1D nanomaterials; 2D electronics; 2D nanomaterials; C; MoS2; band structure; energy conversion; energy efficiency; heat flow; low-power electronics; low-power transistors; nanoelectronics; phase change memory; thermoelectric effects; Conductivity; Films; Graphene; Heating; Phase change materials; Thermal conductivity; Transistors; MoS2; ballistic heat flow; carbon nanotubes; data storage; graphene; low-power transistors; thermoelectrics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2014 44th European
  • Conference_Location
    Venice
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4799-4378-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2014.6948751
  • Filename
    6948751