Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs

Author

Pondigo De Los, A. Erika ; Gutierrez-D, E.A. ; Molina-R, J. ; Guarin, Fernando

Author_Institution

Dept. of Electron., Inst. Nac. de Astrofis., Opt. y Electron., Puebla, Mexico

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

90

Lastpage

93

Abstract

Through the measurement of the magneto-conductance properties of the reverse-biased Drain-Bulk (DB) junction of a MOSFET, we found the conductance of the active channel region, nearby the DB junction, is not space homogeneous, but it shows better conductance properties towards the edges than in the middle of the channel. Such a non-homogeneous channel conductance is attributed to the asymmetrical distribution of the mechanical strain used to enhance the carrier mobility.

Keywords

MOSFET; carrier mobility; deformation; internal stresses; tunnelling magnetoresistance; DB junction; MOSFET; carrier mobility; magnetoconductance properties; magnetotunneling conductance; nonhomogeneous channel conductance; nonhomogeneous space mechanical strain; reverse-biased drain-bulk junction; Junctions; Magnetic field measurement; Magnetic tunneling; Magnetomechanical effects; Strain; Stress; Magnetic Field; Quantum Tunneling; Strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948765

Filename

6948765