Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

Author

Andrieu, F. ; Casse, M. ; Baylac, E. ; Perreau, P. ; Nier, O. ; Rideau, D. ; Berthelon, R. ; Pourchon, F. ; Pofelski, A. ; De Salvo, B. ; Gallon, C. ; Mazzocchi, V. ; Barge, D. ; Gaumer, C. ; Gourhant, O. ; Cros, A. ; Barral, V. ; Ranica, R. ; Planes, N.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

106

Lastpage

109

Abstract

We fabricated Fully-Depleted (FD) nMOSFETs on strain-SOI substrates (sSOI), exceeding regular FDSOI devices by +20% in nMOS ON-state current (I_ON) and +18% in SRAM read current. For pMOSFETs on sSOI, the integration of Si_0.57Ge_0.43 by the Ge-enrichment technique (in so-called sSGOI) is the solution to reach the performance of Si_0.78Ge_0.22 channels built on SOI (SGOI) in terms of short channel hole mobility and I_ON. We analyse the layout effects in sSOI/sSGOI transistors, ring oscillators (ROs) and SRAMs for different Ge amounts and strains and report for the first time the carrier mobility in sSOI/sSGOI vs. the active length (L_ac). Through a layout optimization, a high uniaxial strain can be created, boosting the carrier mobility in both sSOI/sSGOI by 10/20% and ensuring the scalability of the planar FDSOI architecture for the 10nm node.

Keywords

Ge-Si alloys; MOSFET; SRAM chips; hole mobility; oscillators; silicon-on-insulator; FD nMOSFET; Ge-enrichment technique; SRAM read current; Si_0.57Ge_0.43; Si_0.78Ge_0.22; carrier mobility; fully-depleted nMOSFET; layout effects; layout optimization; nMOS ON-state current; planar FDSOI architecture; ring oscillators; sSOI-sSGOI transistors; short channel hole mobility; size 10 nm; strain-SOI substrates; uniaxial strain; Layout; Logic gates; MOSFET; Silicon germanium; Strain; Substrates; Complementary Metal Oxide Semiconductor (CMOS); Fully Depleted Silicon On Insulator (FDSOI); strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948769

Filename

6948769