A wafer level monitoring method for plasma-charging damage using antenna PMOSFET test structure

Author

Watanabe, Hiromi ; Komori, Junko ; Higashitani, Keiichi ; Sekine, Masahiro ; Koyama, Hiroshi

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

Volume

10

Issue

2

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

228

Lastpage

232

Abstract

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices

Keywords

MOSFET; carrier lifetime; hot carriers; semiconductor device testing; sputter etching; antenna PMOSFET test structure; device reliability; drain current; gate current; hot-carrier lifetime; plasma-charging damage; substrate current; transistor parameters; wafer level monitoring; Antenna measurements; Diodes; MOSFET circuits; Monitoring; Plasma applications; Plasma devices; Plasma measurements; Protection; Stress; Testing;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.572072

Filename

572072