Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration

Author

Migita, S. ; Matsukawa, T. ; Mori, Takayoshi ; Fukuda, Kenji ; Morita, Yusuke ; Mizubayashi, W. ; Endo, Kazuhiro ; Liu, Yanbing ; O´uchi, S. ; Masahara, M. ; Ota, Hiroyuki

Author_Institution

Green Nanoelectron. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2014

fDate

22-26 Sept. 2014

Firstpage

278

Lastpage

281

Abstract

Tunnel-FETs (TFETs) and MOSFETs are fabricated on a single SOI substrate using the same device parameters and process conditions, and the variation behavior of TFETs is studied by highlighting the difference with MOSFETs. It is found that the variation behavior characteristic to TFET is mainly caused by two factors. One is the dopant concentration at source region. It seems to affect to the uniformity of tunneling current along the channel width. A heavier source concentration is necessary to suppress the variation. Another factor is the channel edge configuration. Electric fields are easily concentrated at channel edge regions, and it lowers the threshold voltage of TFETs locally. It brings about an asymmetric variation behavior. Suppression of these factors is indispensable for the integration of TFET circuits.

Keywords

MOSFET; tunnel transistors; MOSFETs; TFET circuits; asymmetric variation behavior; channel edge configuration; channel width; device parameters; dopant concentration; electric fields; process conditions; source region; threshold voltage; tunnel-FETs; tunneling current uniformity; variation behavior characteristic; Logic gates; MOSFET; Performance evaluation; Silicon; Threshold voltage; Tunneling; tunnel-FET; variation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference (ESSDERC), 2014 44th European

Conference_Location

Venice

ISSN

1930-8876

Print_ISBN

978-1-4799-4378-4

Type

conf

DOI

10.1109/ESSDERC.2014.6948814

Filename

6948814